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Package Marking and Ordering Information
Part Number
FDB390N15A
Top Mark
FDB390N15A
Package
D 2 -PAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
24 mm
Quantity
800 units
Electrical Characteristics T C = 25 o C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
I D = 250 μ A, Referenced to 25 C
BV DSS
Δ BV DSS
/ Δ T J
I DSS
I GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I D = 250 μ A, V GS = 0 V
V DS = 120 V, V GS = 0 V
V DS = 120 V, T C = 150 o C
V GS = ±20 V, V DS = 0 V
o
150
-
-
-
-
-
0.1
-
-
-
-
-
1
500
±100
V
V/ o C
μ A
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
V GS = 10 V, I D = 27 A
V DS = 10 V, I D = 27 A
2.0
-
-
-
33.5
33
4.0
39.0
-
V
m Ω
S
Dynamic Characteristics
C iss
C oss
C rss
C oss(er)
Q g(tot)
Q gs
Q gs2
Q gd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Energy Related Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
V DS = 75 V, V GS = 0 V,
f = 1 MHz
V DS = 75 V, I D = 27 A
V DS = 75 V, I D = 27 A,
V GS = 10 V
f = 1 MHz
(Note 4)
-
-
-
-
-
-
-
965
96
5.8
169
14.3
5.0
2.0
3.5
1.4
1285
130
-
-
18.6
-
-
-
-
pF
pF
pF
pF
nC
nC
nC
nC
Ω
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 75 V, I D = 27 A,
V GS = 10 V, R G = 4.7 Ω
(Note 4)
-
-
-
-
14
10
20
5
38
30
50
20
ns
ns
ns
ns
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
27
108
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I SD = 27 A
V GS = 0 V, I SD = 27 A, V DD = 75 V,
dI F /dt = 100 A/ μ s
-
-
-
-
63
131
1.25
-
-
V
ns
nC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. Starting T J = 25 ° C, L = 3 mH, I SD = 7.2 A.
3. I SD ≤ 27 A, di/dt ≤ 200 A/ μ s, V DD ≤ BV DSS , starting T J = 25 ° C.
4. Essentially independent of operating temperature typical characteristics.
?2011 Fairchild Semiconductor Corporation
FDB390N15A Rev. C1
2
www.fairchildsemi.com
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